Transistor
2SA1748
Silicon PNP epitaxial planer type
For high-frequency amplification Complementary to 2SC4562
2.1±0.1
...
Transistor
2SA1748
Silicon PNP epitaxial planer type
For high-frequency amplification Complementary to 2SC4562
2.1±0.1
Unit: mm
s Features
q q q
0.425
1.25±0.1
0.425
High transition frequency fT. Small collector output capacitance Cob. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Ratings –50 –50 –5 –50 150 150 –55 ~ +150
Unit V V V mA mW ˚C ˚C
0.7±0.1
0 to 0.1
0.2±0.1
1:Base 2:Emitter 3:Collector
EIAJ:SC–70 S–Mini Type Package
Marking symbol :
AL
s Electrical Characteristics
Parameter Collector cutoff current Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Forward current transfer ratio Collector to emitter saturation
voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = –10V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –2mA IC = –10mA, IB = –1mA VCB = –10V, IE = 2mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –50 –50 –5 200 – 0.1 250 1.5 500 – 0.3 V MHz pF min typ max – 0.1 –100 Unit µA µA V V V
*h
FE
Rank classification
Rank hFE Marking Symbol Q 2...