2SA1689

Ordering number:ENN3233 PNP Epitaxial Planar Silicon Transistors 2SA1689 TV Camera Deflection High-Voltage Driver Applications Features · High breakdown voltage. · Small reverse transfer capacitance and excellent high frequency characteristic. · Excellent DC current gain. · Adoption of FBET process. Package Dimensions unit:mm 2003B [2SA1689] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE1 hFE2 Gain-Bandwidth Product fT * : The 2SA1689 is classified by 0.1mA hFE as follows : Rank E F hFE 100 to 200 160 to 320 VCB=–200V, IE=0 VEB=–4V, IC=0 VCE=–6V, IC=–0.1mA VCE=–6V, IC=–1mA VCE=–30V, IC=–10mA 123 JEDEC : TO-92 1 : Emitter 1.3 1.3 EIAJ : SC-43 2 : Collector SANYO : NP 3 : Base Ratings –300 –300 –5 –50 –100 600 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C Ratings min typ max Unit –0.1 µA –0.1 µA 100 320 100 70 MHz Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, s...