2SA1682

Ordering number : EN3011B 2SA1682 SANYO Semiconductors DATA SHEET 2SA1682 PNP Epitaxial Planar Silicon Transistor TV Camera Deflection, High-Voltage Driver Applications Features High breakdown voltage (VCEO≥300V). Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ). Excellent DC current gain ratio (hFE ratio : 1.0 typ). Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Marking : CS Symbol ICBO IEBO Conditions VCB=--200V, IE=0A VEB=--4V, IC=0A Ratings --300 --300 --5 --50 --100 250 150 --55 to +150 Unit V V V mA mA mW °C °C Ratings min typ max Unit --0.1 μA --0.1 μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control ...