isc Silicon PNP Power Transistor
2SA1673
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -180V(Min) ·Good ...
isc Silicon PNP Power Transistor
2SA1673
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4388 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-180
V
VCEO
Collector-Emitter
Voltage
-180
V
VEBO
Emitter-Base
Voltage
-6
V
IC
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-4
A
85
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website: www.iscsemi.com
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isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= -5A; IB= -0.5A
ICBO
Collector Cutoff Current
VCB= -180V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -3A; VCE= -4V
fT
Current-Gain—Bandwidth Product
IE= 0.5A; VCE= -12V
hFE classifications
O
P
Y
50-100 70-140 90-180
2SA1673
MIN TYP. MAX UNIT
-180
V
-2.0 V
-10 μA
-10 μA
50
180
20
MHz
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contai...