JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
2SA1611 TRANSISTOR (P...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
2SA1611 TRANSISTOR (PNP)
FEATURES High DC Current Gain High
Voltage Complementary to 2SC4177
SOT–323
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base
Voltage
-60
VCEO Collector-Emitter
Voltage
-50
VEBO Emitter-Base
Voltage
-5
IC Collector Current
-100
PC Collector Power Dissipation
150
RΘJA Thermal Resistance From Junction To Ambient
833
Tj Junction Temperature Tstg Storage Temperature
150 -55~+150
Unit V V V mA
mW ℃/W
℃ ℃
1. BASE 2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakdown
voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation
voltage Collector-emitter
voltage Transition frequency
Symbol V(BR)CBO V(BR)CEO ...