2SA1535

Power Transistors 2SA1535, 2SA1535A Silicon PNP epitaxial planar type For low-frequency driver and high power amplification Complementary to 2SC3944 and 2SC3944A 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q 4.0 Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics High transition frequency fT Makes up a complementary pair with 2SC3944 and 2SC3944A, which is optimum for the driver-stage of a 60 to 100W output amplifier. (TC=25˚C) Ratings –150 –180 –150 –180 –5 –1.5 –1 15 2.0 150 –55 to +150 Unit V 7.5±0.2 16.7±0.3 φ3.1±0.1 1.4±0.1 1.3±0.2 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SA1535 2SA1535A 2SA1535 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO Solder Dip 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 emitter voltage 2SA1535A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SA1535 2SA1535 2SA1535A (TC=25˚C) Symbol ICBO VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –150V, IE = 0 IC = –1mA, IB = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –5V, IC = –500mA IC = –500mA, IB = –50mA IC = –500mA, IB = –50mA VCE = –10V, IC = –50mA, f = 10MHz VCB = –10V, ...