2SA1533

Transistor 2SA1533 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC3939 5.0±0.2 4.0±0.2 Unit: mm q q High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –80 –80 –5 –1 – 0.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 1 2 3 2.54±0.15 1.27 0.45 –0.1 1.27 +0.15 13.5±0.5 0.7±0.1 0.7±0.2 8.0±0.2 s Features 0.45 –0.1 +0.15 2.3±0.2 1:Emitter 2:Collector 3:Base TO–92NL Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –20V, IE = 0 IC = –10µA, IE = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –5V, IC = –500mA IC = –300mA, IB = –30mA IC = –300mA, IB = –30mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –80 –80 –5 90 50 100 – 0.2 – 0.85 85 11 20 – 0.4 –1.2 V V MHz pF 220 min typ max – 0.1 Unit µA V V ...