2SA1468

2SA1468 Silicon PNP Epitaxial Application High voltage amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1468 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –180 –180 –5 –100 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –180 –180 –5 100 — — — — Typ — — — — — — 200 3.5 Max — — — 320 –0.5 –1.0 — — V V MHz pF Unit V V V Test conditions I C = –10 µA, IE = 0 I C = –0.5 mA, RBE = ∞ I E = –10 µA, IC = 0 VCE = –12 V, IC = –2 mA*2 I C = –30 mA, IB = –3 mA*2 VCE = –12 V, IC = –2 mA VCE = –12 V, IC = –10 mA VCB = –10 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance V(BR)EBO hFE*1 VCE(sat) VBE fT Cob Notes: 1. The 2SA1468 is grouped by h FE as follows. 2. Pulse test Grade Mark hFE B INB 100 to 200 C INC 160 to 320 2 2SA1468 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 –100 Collector Current IC (mA) Typical Output Characteristics –1 0 –5 =1 .0 –2. 0 –80 –60 PC 100 –1.0 –0.5 50 mW –40 –20 IB = 0 50 –0.2 –0.1 mA Ta = 25°C 0 100 150 50...