2SA1433

Ordering number:EN3471 PNP Epitaxial Planar Silicon Transistor 2SA1433 High-Definition CRT Display Applications Features · High fT (Gain-Bandwidth Product). · Small reverse transfer capacitance (Cre=1.3pF). · Adoption of FBET process. Package Dimensions unit:mm 2006A [2SA1433] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Base-to-Collector Time Contact Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage ICBO IEBO hFE fT rbb, 'cc Cob Cre VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCB=–40V, IE=0 VEB=–3V, IC=0 VCE=–10V, IC=–10mA VCE=–10V, IC=–10mA VCE=–10V, IC=–10mA VCB=–10V, f=1MHz VCB=–10V, f=1MHz IC=–20mA, IB=–2mA IC=–20mA, IB=–2mA IC=–10µA, IE=0 IC=–1mA, RBE=∞ IE=–10µA, IC=0 * : The 2SA1433 is classified by 10mA hFE as follows : 60 D 120 100 E 200 160 F 320 hFE rank : D, E, F EIAJ : SC-51 SANYO : MP B : Base C :Collector E : Emitter Ratings –70 –60 –4 –50 –100 900 150 –55 to +1...