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2SA1430

Part Number	2SA1430
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Epitaxial Type Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1430 Strobe Flash Applications Medium Power Amplifier App...
Datasheet	2SA1430 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1430 Strobe Flash Applications Medium Power Amplifier Applications 2SA1430 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.
5 A) : hFE (2) = 60 (min), 120 (typ.
) (VCE = −1 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −2 A, IB = −50 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB PC T...

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