TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1428
Power Amplifier Applications Power Switching Applica...
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1428
Power Amplifier Applications Power Switching Applications
2SA1428
Unit: mm
Low collector-emitter saturation
voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)
High-speed switching: tstg = 1.0 μs (typ.)
Complementary to 2SC3668
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
VCBO −50 V
Collector-emitter
voltage
VCEO −50 V
Emitter-base
voltage
VEBO −5 V
Collector current
IC −2 A
Base current
IB
−0.2
A
JEDEC
―
Collector power dissipation
PC
1000
mW
JEITA
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating con...
