2SA1415

2SA1415 / 2SC3645 Ordering number : EN1720B 2SA1415 / 2SC3645 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver Applications Features Adoption of FBET process. High breakdown voltage (VCEO=160V). Excellent linearity of hFE and small Cob. Fast switching speed. Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs. Specifications ( ) : 2SA1415 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Marking : 2SA1415 : AA, 2SC3645: CA Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Moutned on ceramic board (250mm2✕0.8mm) Ratings (--)180 (--)160 (--)5 (--)140 (--)200 500 1.3 150 --55 to +150 Unit V V V mA mA mW W °C °C © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Rev.0 I Pwagwew1.oofn5seImwiw.cwo.omnsemi.com Publication Order Number: 2SA1415_2SC3645/D 2SA1415 / 2SC3645 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Turn-ON Time Strage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) ton tstg tf Conditions VCB=(--)80V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(--)10mA VCE=(--)10V, IC=(--)10mA VCB=(--)10V, f=1MHz IC=(--)50mA, IB=(--)5mA See sepcified Test Circuit. See s...