2SA1396

isc Silicon PNP Power Transistor 2SA1396 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC= -5A ·High Switching Speed ·Complement to Type 2SC3568 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -5 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -5A; IB= -0.5A, L= 1mH VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -5V hFE-2 DC Current Gain IC= -3A; VCE= -5V hFE-3 DC Current Gain IC= -5A; VCE= -5V  hFE-2 Classifications M L K 40-80 60-120 100-200 2SA1396 MIN MAX UNIT -10...