SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SA1387
·
DESCRIPTION...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SA1387
·
DESCRIPTION ·With TO-220Fa package ·Low collector saturation
voltage ·High speed switching time ·High DC current gain
APPLICATIONS
·High current switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -7 -5 -1 2 W UNIT V V V A A
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SA1387
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown
voltage Collector-emitter saturation
voltage Base-emitter saturation
voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Trainsition frequency Collector output capacitance CONDITIONS IC=-10mA ;IB=0 IC=-3A ;IB=-0.075A IC=-3A ; IB=-0.075A VCB=-50V; IE=0 VEB=-7V; IC=0 IC=-1A ; VCE=-1V IC=-3A ; VCE=-1V IC=-1A ; VCE=-4V IE=0; VCE=-10V;f=1MHz 150 70 80 200 MHz pF MIN -50 -0.15 -0.8 -0.4 -1.2 -1 -1 400 TYP. MAX UNIT V V V µA µA
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Cob
Switching times Ton ts tf Turn-on time Storage time Fall time IB1=-IB2=-0.075A ...