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2SA1384 Datasheet

Part Number 2SA1384
Manufacturers TY Semiconductor
Logo TY Semiconductor
Description Transistor
Datasheet 2SA1384 Datasheet2SA1384 Datasheet (PDF)

SMD Type Product specification 2SA1384 Features High Voltage: VCBO = -300V , VCEO = -300V Low Saturation Voltage: VCE(sat) = -0.5V (max) Small Collector Output Capacitance: Cob = 6pF PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SC3515 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Jumction temperature Storage temperature Range 2 Symb.

  2SA1384   2SA1384






Part Number 2SA1384
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
Datasheet 2SA1384 Datasheet2SA1384 Datasheet (PDF)

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  2SA1384   2SA1384







Part Number 2SA1384
Manufacturers Kexin
Logo Kexin
Description PNP Transistors
Datasheet 2SA1384 Datasheet2SA1384 Datasheet (PDF)

SMD Type High Voltage Control Applications 2SA1384 Transistors Features High Voltage: VCBO = -300V , VCEO = -300V Low Saturation Voltage: VCE(sat) = -0.5V (max) Small Collector Output Capacitance: Cob = 6pF PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SC3515 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Jumction temperature Storage t.

  2SA1384   2SA1384







Transistor

SMD Type Product specification 2SA1384 Features High Voltage: VCBO = -300V , VCEO = -300V Low Saturation Voltage: VCE(sat) = -0.5V (max) Small Collector Output Capacitance: Cob = 6pF PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SC3515 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Jumction temperature Storage temperature Range 2 Symbol VCBO VCEO VEBO IC IB PC PC * Tj Tstg Rating -300 -300 -8 -100 -20 500 1000 150 -55 to +150 Unit V V V mA mA mW * 2SA1384 mounted on ceramic substrate (250 mm x 0.8 t) Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-base Breakdown Voltage Collector-emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol ICBO IEBO Testconditons VCB = -300V , IE = 0 VEB = -8V , IC = 0 -300 -300 30 150 -0.5 -1.0 50 70 6 8 V V MHz pF Min Typ Max -0.1 -0.1 Unit ìA ìA V V V(BR)CBO IC = -0.1mA , IE = 0 V(BR)CEO IC = -1mA , IB = 0 hFE VCE = -10V , IC = -20mA VCE(sat) IC = -20mA , IB = -2mA VBE(sat) IC = -20mA , IB = -2mA fT Cob VCE = -10V , IC = -20mA VCB = -20V , IE = 0 , f = 1MHz http://www.twtysemi.com [email protected] 4008-318-123 1 of 4 Free Datasheet http://www.datasheet4u.com/ SMD Type Transistors Product specification 2.


2013-10-25 : CTA10    C3665    2SC3604    2SC3606    2SC3608    2SC3617    2SC3618    2SC3619    2SC3624    2SC3626   


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