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2SA1352

Part Number	2SA1352
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Jun 22, 2016
Detailed Description	isc Silicon PNP Power Transistor 2SA1352 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V (Min) ...
Datasheet	2SA1352 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1352 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V (Min) ·Complement to Type 2SC3416 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV chroma output, high-voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5.
0 V IC Collector Current-Continuous -0.
1 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
2 A 1.
2 W 5 150 ℃ T...

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