2SA1338

Ordering number:EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features · Adoption of FBET process. · High breakdown voltage : VCEO=(–)50V. · Large current capacitiy and high fT. · Very small-sized package permitting sets to be small- sized, slim. Package Dimensions unit:mm 2018A [2SA1338/2SC3392] Switching Time Test Circuit ( ) : 2SA1338 (For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F) Specifications C : Collector B : Base E : Emitter SANYO : CP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (–)60 (–)50 (–)5 (–)500 (–)800 200 150 –55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE fT VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)10mA VCE=(–)10V, IC=(–)50mA 100* 300 (200) (–)0.1 (–)0.1 560* Common Base Output Capacitance Collector-to-Emitter Saturation Voltage Cob VCB=(–)10V, f=1MHz VCE(sat) IC=(–)100mA, IB=(–)10mA 3.7 (5.6) 0.1 (0.15) 0.3 (0.4) Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)100mA, IB=(–)10mA 0.8 Collector-to-Base Breakdown Voltage V(BR)CBO IC=(–)10µA,...