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2SA1327

Toshiba

SILICON PNP TRANSISTOR

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS. AUDIO POWER AMPLIFIER APPLICATIONS. FEATURES . MIN....


Toshiba

2SA1327

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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS. AUDIO POWER AMPLIFIER APPLICATIONS. FEATURES . MIN. h FE of 70 at -2V, -8A . -10A Rated Collector Current . MAX. VcE(sat) of -0.5V at -8A Iq . 20W at 25°C Case Temperature Unit in mm 10.3MAX„ 03.2 + 0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current DC Pulse Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range SYMBOL VCBO VcEO v EB0 ic ICP PC T stg RATING -50 -20 -10 -20 2.0 20 150 -55-150 UNIT 1. BASE 2. COLLECTOR 3. EMITTER TOSHIBA Weight : 2 . lg °C 2-10L1A ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Brakdown Voltage ICBO Jebo VCEO V CB =-50V, I E=0 V EB =-8V, I C =0 I c=-10mA, Ib=0 DC Current Gain hFE(l) (Note) VCE=-2V, I C=-1A Collector-Emitter Saturat...




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