2SA1315

2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SC3328 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −80 −80 −5 −2 −1 900 150 −55 to 150 Unit V V V A A mW °C °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Note1: Using continuously under heavy loads (e.g. the application of high Weight: 0.36 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Free Datasheet http://www.Datasheet4U.com 2SA1315 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage ...