2SA1308

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SC3308 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 1.0 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1308 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -3.0A; IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -3.0A; IB= -0.15A ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -1.0A; VCE= -1.0V hFE-2 DC Current Gain IC= -3.0A; VCE= -1.0V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= -5.0A, RL= 10Ω, IB1= -IB2= -0.15A, VCC≈-30V  hFE-1 Classifications O Y 70-140 120-240 2SA1308 MIN MAX UNIT -0.4 V -1.2 V -1 μA -1 μA 70 240 40 0.2 μs 1.0 μs 0.1 μs isc website：ww...