Transistor
2SA1254
Silicon PNP epitaxial planer type
For high-frequency amplification Complementary to 2SC2206
6.9±0.1 ...
Transistor
2SA1254
Silicon PNP epitaxial planer type
For high-frequency amplification Complementary to 2SC2206
6.9±0.1 2.5±0.1 1.0
Unit: mm
0.4
2.4±0.2 2.0±0.2 3.5±0.1
q q q
0.85
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings –30 –20 –5 –60 –30 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C
1:Base 2:Collector 3:Emitter
3
0.55±0.1
0.45±0.05
2
1
2.5
2.5
EIAJ:SC–71 M Type Mold Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector to emitter saturation
voltage Base to emitter
voltage Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance
(Ta=25˚C)
Symbol ICBO ICEO IEBO hFE fT VCE(sat) VBE NF Zrb Cre
*
Conditions VCB = –10V, IE = 0 VCE = –20V, IB = 0 VEB = –5V, IC = 0 VCE = –10V, IC = –1mA VCB = –10V, IE = 1mA, f = 200MHz IC = –10mA, IB = –1mA VCE = –10V, IC = –1mA VCB = –10V, IE = 1mA, f = 5MHz VCB = –10V, IE = 1mA, f = 2MHz VCE = –10V, IC = –1mA, f = 10.7MHz
min
typ
1.25±0.05
max – 0.1 –100 –10
4.1±0.2
High transition frequency fT. Low collector to emitter saturation
voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit...
