DatasheetsPDF.com

2SA1246 Datasheet

Part Number 2SA1246
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet 2SA1246 Datasheet2SA1246 Datasheet (PDF)

Ordering number:ENN1047C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 High-VEBO, AF Amp Applications Features · High VEBO. · Wide ASO and highly resistant to breakdown. Package Dimensions unit:mm 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1246 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Col.

  2SA1246   2SA1246






Part Number 2SA1249
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description POWER TRANSISTOR
Datasheet 2SA1246 Datasheet2SA1249 Datasheet (PDF)

isc Silicon PNP Power Transistor 2SA1249 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC3117 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV sound output, converters, inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V .

  2SA1246   2SA1246







Part Number 2SA1249
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SA1246 Datasheet2SA1249 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1249 DESCRIPTION ·With TO-126 package ·Complement to type 2SC3117 ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color TV sound output,converters, Inverters applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter.

  2SA1246   2SA1246







Part Number 2SA1249
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet 2SA1246 Datasheet2SA1249 Datasheet (PDF)

Ordering number:ENN1060C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1249/2SC3117 160V/1.5A Switching Applications Uses · Color TV sound output, converters, inverters. Features · High breakdown voltage. · Large current capacity. · Adoption of MBIT process. Package Dimensions unit:mm 2009B [2SA1249/2SC3117] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1249 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-t.

  2SA1246   2SA1246







Part Number 2SA1248
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet 2SA1246 Datasheet2SA1248 Datasheet (PDF)

Ordering number:ENN1032B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1248/2SC3116 160V/700mA Switching Applications Uses · Color TV sound output, converters, inverters. Features · High breakdown voltage. · Large current capacity. · Using MBIT process Package Dimensions unit:mm 2009B [2SA1248/2SC3116] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1248 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emit.

  2SA1246   2SA1246







PNP/NPN Epitaxial Planar Silicon Transistors

Ordering number:ENN1047C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 High-VEBO, AF Amp Applications Features · High VEBO. · Wide ASO and highly resistant to breakdown. Package Dimensions unit:mm 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1246 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg www.DataSheet.net/ 1.3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : NP Conditions Ratings (–)60 (–)50 (–)15 (–)150 (–)300 400 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Common base Output Capacitance Collector-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VCB=(–)40V, IE=0 VEB=(–)10V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)1mA VCB=(–)6V, f=1MHz IC=(–)50mA, IB=(–)5mA 100* 100 (4.2)3.0 (–)0.5 Conditions Ratings min typ max (–)0.1 (–)0.1 560* MHz pF V Unit µA µA * : The 2SA1246/2SC3114 are classified as follows according to hFE at 1mA. Rank hFE R 100 to 200 S 140 to 280 T 200 to 400 U 280 to 560 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle app.


2005-03-22 : 12CWQ10FN    12H3020-2    12H3040-2    12TQ045S    MI31T    MI31TA    MI32T    MI32T-L    MI32TA    MI33T   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)