2SA1245

TOSHIBA Transistor Silicon PNP Epitaxial Planar Type 2SA1245 High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications 2SA1245 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -15 -8 -2 -30 -15 150 125 -55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition Min Typ. Max Unit fT VCE = -5 V, IC = -10 mA ¾ 4 ¾ GHz ïS21eï2 (1) VCE = -5 V, IC = -10 mA, f = 500 MHz ¾ 14 ¾ dB ïS21eï2 (2) VCE = -5 V, IC = -10 mA, f = 1 GHz ¾ 9.5 ¾ NF (1) NF (2) VCE = -5 V, IC = -3 mA, f = 500 MHz VCE = -5 V, IC = -3 mA, f = 1 GHz ¾ 2.5 ¾ ¾ 3.0 ¾ dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = -5 V, IE = 0 VEB = -1 V, IC = 0 VCE = -5 V, IC = -10 mA VCB = -5 V, IE = 0, f = 1 MHz Note: Cre is measured by 3 terminal method with capacitance bridge. Min (Note) ¾ ¾ 20 ¾ ¾ Typ. ¾ ¾ ¾ 0.75 0.60 Max -0.1 -0.1 ¾ ¾ ¾ Unit mA mA pF pF 1 2003-03-19 Marking 2SA1245 2 2003-03-19...