TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1244
High Current Switching Applications
2SA1244
Unit: m...
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1244
High Current Switching Applications
2SA1244
Unit: mm
Low collector saturation
voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) High speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SC3074
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
VCBO
−60
V
Collector-emitter
voltage
VCEO
−50
V
Emitter-base
voltage
VEBO
−5
V
Collector current
IC
−5
A
Base current
IB
−1
A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.0 W
20
Junction temperature
JEDEC
―
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Start of commercial production
1981-05
1
2013-11-01
2SA1244
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off curren...