isc Silicon PNP Power Transistor
DESCRIPTION ·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Col...
isc Silicon PNP Power Transistor
DESCRIPTION ·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Collector-Emitter Saturation
Voltage-
: VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) ··High Power Dissipation-
: PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·For medium power amplifier and strobe flash applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-35
V
VCEO
Collector-Emitter
Voltage
-20
V
VEBO
Emitter-Base
Voltage
-8
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
-8
A
IB
Base Current
Collector Power Dissipation
PC
@ TC=25℃ Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
-0.5
A
10 W
1.0
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SA1242
isc website:www.iscsemi.com
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isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation
Voltage IC= -4A; IB= -0.1A
VBE(on) Base-Emitter On
Voltage
IC= -4A; VCE= -2V
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= -1mA; IC= 0
ICBO
Collector Cutoff Current
VCB= -35V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -8V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -2V
hFE-2
DC Current Gain
IC= -4A; VCE= -2V
CO...