2SA1241

Bipolar Transistors Silicon PNP Epitaxial Type 2SA1241 2SA1241 1. Applications Power Amplifiers Power Switching 2. Features (1) Low collector-emitter saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1.0 A, IB = -50 mA) (2) High-speed switching: tstg = 1.0 µs (typ.) (3) Complementary to 2SC3076 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 Emitter-base voltage VEBO -5 Collector current (DC) (Note 1) IC -2 A Collector current (pulsed) (Note 1) ICP -3 Base current Collector power dissipation Collector power dissipation Junction temperature (Ta = 25 �) (Tc = 25 �) IB -1 PC 1 W PC 10 Tj 150 � Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc)...