Ordering number:ENN781G
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1208/2SC2910
High-Voltage Switching Audio 80W ...
Ordering number:ENN781G
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1208/2SC2910
High-
Voltage Switching Audio 80W Output Predriver Applications
Features
· Adoption of FBET process. · High breakdown
voltage. · Excellent linearity of hFE and small Cob. · Fast swtching speed.
Package Dimensions
unit:mm 2006B
[2SA1208/2SC2910]
6.0 5.0 4.7
0.5 0.6
6.0
14.0
3.0
8.5
0.5
0.5
1 2 3
( ) : 2SA1208
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1.45
1.45
1 : Emitter 2 : Collector 3 : Base SANYO : MP
Ratings (–)180 (–)160 (–)5 (–)70 (–)140 900 150 –55 to +150
Unit V V V mA mA mW
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation
Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)10mA VCE=(–)10V, IC=(–)10mA VCB=(–)10V, f=1MHz IC=(–)30mA, IB=(–)3mA 100* 150 (2.5)2.0 0.08 (–0.14) 0.3 (–0.4) Conditions Ratings min typ max (–)0.1 (–)0.1 400* MHz pF V Unit µA µA
* : The 2SA1208/2SC2910 are classified by 10mA hFE are follows :
Rank hFE R 100 to 200 S 140 to 280 T 200 to 400
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