TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1202
Power Amplifier Applications Voltage Amplifier Appli...
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1202
Power Amplifier Applications
Voltage Amplifier Applications
2SA1202
Unit: mm
Suitable for driver of 30 to 35 watts audio amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC2882
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current
Collector power dissipation
Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC PC (Note 1)
Tj Tstg
−80 −80 −5 −400 −80 500
1000
150 −55 to 150
V V V mA mA
mW
°C °C
PW-MINI JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
http://store.iiic.cc/
2009-12-21
Electrical Characteristics (Ta = 25°C)
Characteristics
Symb...