2SA1194K

2SA1194(K) Silicon PNP Epitaxial Application High gain amplifier Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base 1 2 3 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C Tj Tstg 1 Rating –60 –60 –7 –1 –2 1 8 150 –55 to +150 Unit V V V A A W W °C °C 2SA1194(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min –60 — — 1000 — — — — Typ — — — — — — 0.7 0.8 Max — –1.0 –1.0 — –2.0 –2.0 — — V V µs µs I C = –500 mA I B1 = –IB2 = –1 mA Unit V µA µA Test conditions I C = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, IC = 0 VCE = –3 V, IC = –500 mA*1 I C = –500 mA, IB = –1 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test I CBO I EBO hFE VCE(sat) VBE(sat) t on t off Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W) –10 –3 iC (peak) –1.0 –0.3 –0.1 –0.03 Area of Safe Operation PW =1 Collector Current IC (A) ms 8 IC (max) PW = 10 ms (1 Shot) D (T C O C = pe 25 rat °C ion ) (1 S hot ) 4 0 50 100 Case Temperature TC (°C) 150 Ta = 25°C –0.01 –0.1 –0.3 –1.0 –3 –10 –30 –100 Collector to emit...