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2SA1186

Inchange Semiconductor
Part Number 2SA1186
Manufacturer Inchange Semiconductor
Description POWER TRANSISTOR
Published Jul 4, 2011
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Line...
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2SA1186
2SA1186

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANG...


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