2SA1169

isc Silicon PNP Power Transistor 2SA1169 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) ·High Power Dissipation ·Complement to Type 2SC2773 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1169 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -200 V V(BR)EBO Emitter-Base Breakdown Voltage IE=-1mA; IC=0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -2.5 V ICBO Collector Cutoff Current VCB= -200V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -100 μA hFE DC Current Gain IC= -5A; VCE= -4V 30 200 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1.0MHz 400 pF fT Current-Gain—Bandwidth Product IE= 1A; VCE= -12V 20 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any...