2SA1110

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1110 DESCRIPTION ·With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT ·Optimum for the driver stage of a 40w to 60w output amplifier APPLICATIONS ·For low-frequency power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute Maximun Ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -0.5 -1.0 1.2* 150 -55~150 UNIT V V V A A W Note) *: Without heat sink SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-100µA;IB=0 IE=-10µA ;IC=0 IC=-0.3A ;IB=-30mA IC=-0.3A ;IB=-30mA IC=-150mA ; VCE=-10V IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-50mA ; VCB=-10V, 65 50 MIN -120 -5 2SA1110 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat hFE-1 ...