2SA1091

TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1091 2SA1091 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = −300 V, VCEO = −300 V Low saturation voltage: VCE (sat) = −0.5 V (max) Small collector output capacitance: Cob = 6 pF (typ.) Complementary to 2SC2551. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −300 V Collector-emitter voltage VCEO −300 V Emitter-base voltage VEBO −8 V Collector current IC −100 mA Base current Collector power dissipation Junction temperature Storage temperature range IB −20 mA PC 400 mW Tj 150 °C Tstg −55~150 °C JEDEC JEITA TOSHIBA TO-92 SC-43 2-5F1B Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.21 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Sym...