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2SA1081

Hitachi Semiconductor

Silicon PNP Epitaxial Transistor

2SA1025, 2SA1081, 2SA1082 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC2396...


Hitachi Semiconductor

2SA1081

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Description
2SA1025, 2SA1081, 2SA1082 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC2396, 2SC2543 and 2SC2544 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1025, 2SA1081, 2SA1082 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1025 –60 –60 –5 –100 100 400 150 –55 to +150 2SA1081 –90 –90 –5 –100 100 400 150 –55 to +150 2SA1082 –120 –120 –5 –100 100 400 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SA1025 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Symbol Min V(BR)CBO –60 V(BR)CEO –60 V(BR)EBO –5 ICBO IEBO 1 2SA1081 Max — — — –0.1 –0.1 800 –0.2 Min –90 –90 –5 — — 250 — — — — Typ Max — — — — — — — — — — –0.1 –0.1 800 –0.2 2SA1082 Min Typ Max — — — –0.1 –0.1 800 –0.2 V V Unit Test conditions V V µA µA IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –50 V, I E = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA Typ — — — — — — — –120 — –120 — –5 — — 250 — — — — — — — — — — — 250 — — — — DC current transfer ratio hFE* Collector to emitter saturation voltage Base to emitter voltage VCE(sat) VBE –0.6 — ...




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