isc Silicon PNP Power Transistor
2SA1078
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.) ·Go...
isc Silicon PNP Power Transistor
2SA1078
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -120V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2528 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High frequency power
amplifiers ·Audio power
amplifiers and drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
-120
V
VCEO Collector-Emitter
Voltage
-120
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-2
A
25
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
isc website:www.iscsemi.com
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isc Silicon PNP Power Transistor
2SA1078
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -1mA; RBE= ∞
-120
V
V(BR)CBO Collector-Base Breakdown
Voltage
IC= -1μA; IE= 0
-120
V
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= -1μA; IC= 0
-5
V
VCE(sat) Collector-Emitter Saturation
Voltage IC= -0.7A; IB= -0.07A
-1.0
V
VBE(on) Base-Emitter On
Voltage
IC= -0.7A; VCE= -5V
-1.7
V
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
-1
μA
ICEO
Collector Cutoff Current
VCE= -120V; IB= 0
-100 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-1
μA
hFE-1
DC Current Gain
IC= -0.3A; VCE= -5...