DatasheetsPDF.com

2SA1065 Datasheet

Part Number 2SA1065
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description POWER TRANSISTOR
Datasheet 2SA1065 Datasheet2SA1065 Datasheet (PDF)

isc Silicon PNP Power Transistor 2SA1065 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2489 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150.

  2SA1065   2SA1065






Part Number 2SA1065
Manufacturers SavantIC
Logo SavantIC
Description Silicon POwer Transistors
Datasheet 2SA1065 Datasheet2SA1065 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1065 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High transition frequency ·Complement to type 2SC2489 APPLICATIONS ·For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Co.

  2SA1065   2SA1065







POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA1065 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2489 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -15 A 120 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A VBE(on) Base-Emitter On Voltage IC= -10A; VCE= -5V ICBO Collector Cutoff Current VCB= -70V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -2A; VCE= -5V hFE-2 DC Current Gain IC= -10A; VCE= -5V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V  hFE-2 Classifications R Q P O 40-80 60-120 90-180 140-280 2SA1065 MIN TYP. MAX UNIT -150 V -2.0 V -2.5 V -1 mA -2 mA 40 28.


2011-07-04 : 2SA1186    2SA1185    2SA1184    2SA1180    2SA1170    2SA1169    2SA1166    2SA1147    2SA1146    2SA1142   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)