POWER TRANSISTOR
Description
isc Silicon PNP Power Transistor
2SA1060
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High Power Dissipation ·Complement to Type 2SC2484 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power audio frequency amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃...
Inchange Semiconductor
2SA1060 PDF File
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