2SA1052

2SA1052 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1052 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings –30 –30 –5 –100 100 150 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –30 –30 –5 — — 1 Typ — — — — — — — — Max — — — –0.5 –0.5 500 –0.2 –0.75 Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –20 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Note: Grade Mark hFE B MB 100 to 200 C MC 160 to 320 V(BR)EBO I CBO I EBO hFE* 100 — — D MD VCE(sat) VBE V V I C = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA 1. The 2SA1052 is grouped by hFE as follows. 250 to 500 See characteristic curves of 2SA1031. 2 2SA1052 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 100 50 0 100 150 50 Ambient Temperature Ta (°C) 3 Unit: mm 0.65 0.10 3 – 0.4 + – 0.05 0.16 – 0.06 + 0.10 1.5 ± 0.15 +...