TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1049
2SA1049
Audio Frequency Amplifier Applications
Un...
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1049
2SA1049
Audio Frequency Amplifier Applications
Unit: mm
Small package. High breakdown
voltage: VCEO = −120 V High hFE: hFE = 200~700 Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC2459.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
VCBO
−120
V
Collector-emitter
voltage
VCEO
−120
V
Emitter-base
voltage
VEBO −5 V
Collector current
IC
−100
mA
Base current
IB
−20 mA
JEDEC
―
Collector power dissipation
PC
200 mW
JEITA
―
Junction temperature Storage temperature range
Tj 125 °C
Tstg
−55~125
°C
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Em...