2SA1030

2SA1029, 2SA1030 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC458 and 2SC2308 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1029 –30 –30 –5 –100 100 300 150 –55 to +150 2SA1030 –55 –50 –5 –100 100 300 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SA1029 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* 1 2SA1030 Max — — — –0.5 –0.5 500 –0.8 –0.2 — 4.0 Min –55 –50 –5 — — 100 — — 200 — Typ — — — — — — — — 280 3.3 Max — — — –0.5 –0.5 320 –0.8 –0.2 — 4.0 V V MHz pF Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA VCE = –12 V, I C = –2 mA I C = –10 mA, I B = –1 mA VCB = –12 V, I C = –2 mA VCB = –10 V, IE = 0, f = 1 MHz Min –30 –30 –5 — — 100 — — 200 — Typ — — — — — — — — 280 3.3 Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat) Gain bandwidth product f T Collector output capacitance No...