2SA1016

Ordering number:EN572D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1016, 1016K/2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit:mm 2003A [2SA1016, 1016K/2SC2362, 2362K] ( ) : 2SA1016, 1016K Specifications JEDEC : TO-92 EIAJ : SC-43 SANYO : NP B : Base C : Collecor E : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions 2SA1016, 2SC2362 (–)120 (–)100 2SA1016K, 2SC2362K (–)150 (–)120 (–)5 (–)50 (–)100 400 125 –55 to +125 Unit V V V mA mA mW ˚C ˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE fT VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)1mA Output Capacitance Cob VCB=(–)10V, f=1MHz Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Noise Level Noise Peak Level VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VNO(ave) VNO(peak) IC=(–)10mA, IB=(–)1mA IC=(–)10µA, IE=0 [A1016, C2362] IC=(–)10µA, IE=0 [A1016K, C2362K] IC=(–)1mA, RBE=∞ [A1016, C2362] IC=(–)1mA, RBE=∞ [A1016K, C2362K] IE=(–)10µA, IC=0 VCC=30V, IC=1mA, Rg=56kΩ, VG=77dB/1kHz VCC=30V, IC=1mA, Rg...