2SA1015
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivide...
2SA1015
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base
Voltage Collector Emitter
Voltage Emitter Base
Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO
-IC -IB Ptot Tj Tstg
1. Emitter 2. Collector 3. Base TO-92 Plastic Package
Value 50 50 5 150 50 400 150
- 55 to + 150
Unit V V V mA mA
mW OC OC
Characteristics at Ta = 25 OC Parameter
DC Current Gain at -VCE = 6 V, -IC = 2 mA
Current Gain Group
at -VCE = 6 V, -IC = 150 mA Collector Base Breakdown
Voltage at -IC = 100 µA Collector Emitter Breakdown
Voltage at -IC = 10 mA Emitter Base Breakdown
Voltage at -IE = 10 µA Collector Base Cutoff Current at -VCB = 50 V
Emitter Cutoff Current at -VEB...