INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SA1006B
DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -250Vdc (Min) ·Wide Area of Safe Operation ·Complement to Type 2SC2336B ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Adudio frequency power amplifier ...
