isc Silicon PNP Power Transistor
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO=...
isc Silicon PNP Power Transistor
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -150V(Min.) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-150
V
VCEO Collector-Emitter
Voltage
-150
V
VEBO
Emitter-Base
Voltage
-6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-12
A
120
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
2SA1003
isc website:www.iscsemi.com
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isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -30mA; IB= 0
V(BR)CBO Collector-Base Breakdown
Voltage
IC= -1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= -8A; IB= -0.8A
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -0.5A ; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -1A ; VCE= -10V
2SA1003
MIN TYP. MAX UNIT
-150
V
-150
V
-6
V
-3.0 V
-50 μA
-50 μA
50
200
40
MHz
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The i...