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2SA1001

Inchange Semiconductor
Part Number 2SA1001
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Jun 22, 2016
Detailed Description isc Silicon PNP Power Transistor 2SA1001 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : ...
Datasheet PDF File 2SA1001 PDF File

2SA1001
2SA1001

Overview
isc Silicon PNP Power Transistor 2SA1001 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.
) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -8 A 80 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trad...


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