2SA0885

Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 ■ Features Output of 3 W can be obtained by a complementary pair with 2SC1846 TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0.5 –0.1 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.2±0.2 1.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −45 −35 −5 −1 −1.5 1.2 5.0 * 0.75±0.1 Unit 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1 V V V A A W °C °C 1 2 150 −55 to +150 Note) *: With a 100 × 100 × 2 mm Al heat sink ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCBO VCEO ICBO ICEO IEBO hFE1 * Conditions IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 VCB = −20 V, IE = 0 VCE = −20 V, IB = 0 VEB = −5 V, IC = 0 VCE = −10 V, IC = −500 mA VCE = −5 V, IC = −1 A IC = −500 mA, IB = −50 mA VCE = −10 V, IE = 50 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz Min −45 −35 Typ 16.0±1.0 1: Emitter 2: Col...