2PD602A

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PD602A NPN general purpose transistor Product specification Supersedes data of 1997 Jun 20 1999 Apr 23 Philips Semiconductors Product specification NPN general purpose transistor FEATURES High current (max. 500 mA) Low voltage (max. 50 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION handbook, halfpage 2PD602A PINNING PIN 1 2 3 base emitter collector DESCRIPTION NPN transistor in an SC-59 plastic package. PNP complement: 2PB710A. MARKING TYPE NUMBER 2PD602AQ 2PD602AR 2PD602AS MARKING CODE XQ XR XS 3 3 1 2 MAM321 1 Top view 2 Fig.1 Simplified outline (SC-59) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 60 50 5 500 1 200 250 +150 150 +150 V V V mA A mA mW °C °C °C UNIT 1999 Apr 23 2 Philips Semiconductors Product specification NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C...