JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
2PD601AW TRANSISTOR (NPN)
FE...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
2PD601AW TRANSISTOR (NPN)
FEATURES High Collector Current Low Colletor-Emitter Saturation
Voltage APPLICATIONS General Purpose Switching and Amplification
SOT–323
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base
Voltage
60
VCEO Collector-Emitter
Voltage
50
VEBO Emitter-Base
Voltage
6
IC Collector Current
100
PC Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj Junction Temperature Tstg Storage Temperature
150 -55～+150
Unit V V V mA
mW ℃/W
℃ ℃
1. BASE 2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakdown
voltage Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation
voltage
Symbol V(BR)CBO V(BR)C...
