2PB709AW

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D114 2PB709AW PNP general purpose transistor Product data sheet 2002 Jun 26 NXP Semiconductors PNP general purpose transistor Product data sheet 2PB709AW FEATURES High collector current (max. 100 mA) Low collector-emitter saturation voltage (max. 500 mV). APPLICATIONS General purpose switching and amplification. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION PNP transistor in an SC-70 (SOT323) plastic package. NPN complement: 2PD601AW MARKING TYPE NUMBER 2PB709AQW 2PB709ARW 2PB709ASW MARKING CODE(1) N5* N7* N9* Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. handbook, halfpage 1 Top view 3 1 2 MAM048 3 2 Fig.1 Simplified outline SC-70 (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector...