DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
2PB709A PNP general purpose transistor
Product specification ...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
2PB709A PNP general purpose transistor
Product specification Supersedes data of 1997 Jun 19 1999 Apr 23
Philips Semiconductors
Product specification
PNP general purpose transistor
FEATURES Low current (max. 100 mA) Low
voltage (max. 45 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION
handbook, halfpage
2PB709A
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3
PNP transistor in an SC-59 plastic package. NPN complement: 2PB601A.
1
3
MARKING TYPE NUMBER 2PB709AQ 2PB709AR 2PB709AS MARKING CODE BQ BR BS
1 Top view
2
2
MAM322
Fig.1 Simplified outline (SC-59) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base
voltage collector-emitter
voltage emitter-base
voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −45 −45 −6 −100 −200 −100 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT
1999 Apr 23
2
Philips Semiconductors
Product specification
PNP general purpose transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Ta...